发明名称 |
Integrated field effect transistor and resonant tunneling diode |
摘要 |
This is an integrated device which comprises an integrated transistor and resonant tunneling diode where the transistor comprises a substrate 10, a buffer layer 12 over the substrate 10, and a channel layer 14 over the buffer layer 12; and the resonant tunneling diode (RTD) comprises a first contact layer 18, a first tunnel barrier layer 20 over the first contact layer 18, a quantum well 22 over the first tunnel barrier layer 20, a second tunnel barrier layer 24 over the quantum well 22, and a second contact layer 26 over the second tunnel barrier layer 24. Other devices and methods are also disclosed.
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申请公布号 |
US5534714(A) |
申请公布日期 |
1996.07.09 |
申请号 |
US19940344039 |
申请日期 |
1994.11.23 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BEAM, III, EDWARD A.;SEABAUGH, ALAN C. |
分类号 |
H01L29/66;H01L21/8244;H01L27/06;H01L27/11;H01L29/08;H01L29/88;(IPC1-7):H01L29/06;H01L31/032;H01L31/033 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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