| 摘要 |
In accordance with the present invention, a polishing pad useful for polishing a semiconductor-comprising substrate is disclosed. The polishing pad is constructed to include conduits which pass through at least a portion of and preferably through the entire thickness of the polishing pad. The conduits, preferably tubulars, are constructed from a first material which is different from a second material used as a support matrix. The conduits are positioned within the support matrix such that the longitudinal centerline of the conduit forms an angle ranging from about 60 DEG to about 120 DEG with the working surface of the polishing pad. In the most preferred embodiment of the present invention, the conduits pass all the way through the thickness of the polishing pad and are sized to permit the flow of polishing slurry, reactive etchant material, heat transfer medium, and/or lubricant from a supply device through the conduits to the working surface of the polishing pad (at least a portion of which is in contact or near contact with the article to be polished).
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