METHOD OF TREATING A POROUS DIELECTRIC LAYER AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

Provided are a method to process a porous dielectric layer and a method to manufacture a semiconductor device using the same. The method to process the porous dielectric layer according to an embodiment of the present invention includes the steps of: preparing a substrate where the porous dielectric layer having an aperture is to be formed; forming a first sub sealing film sealing exposed pores by supplying a first precursor on the substrate, wherein the porous dielectric layer includes multiple pores exposed by the aperture; and forming a second sub sealing film covering the first sub sealing film by supplying a second precursor on the first sub sealing film. Each of the first precursor and the second precursor includes a silicon, and the second precursor has a smaller molecular weight than a molecular weight of the first precursor.