发明名称 Semiconductor substrate electrochemical micromachine etching process
摘要 The semiconductor substrate (7) is mounted parallel to the opposite electrode (6) in the electrolysis tank (4) which has a division wall (1) an internal deflection walls (12, 18) that form a circular flow cavity (2) for the electrolyte (17). An impeller (5) circulates the electrolyte (17) past the electrodes (6, 7). An electrical potential is maintained between the electrodes using a three electrode system: substrate (7), opposite electrode (6) and reference electrode (14) controlled by the potentiostat (8). A temperature regulator (10) and sensors (9, 21) control the electrolyte temperature. A Luggin capillary (15) joins the reference electrode tank (19). Seven application examples are given. The method is also suitable for two and four electrode methods. Etching appts. is also claimed.
申请公布号 DE19548115(A1) 申请公布日期 1996.07.04
申请号 DE19951048115 申请日期 1995.12.21
申请人 NISSAN MOTOR CO., LTD., YOKOHAMA, KANAGAWA, JP 发明人 UCHIYAMA, MAKOTO, MIURA, KANAGAWA, JP;NOJIRI, HIDETOSHI, YOKOHAMA, KANAGAWA, JP;IWASAKI, YASUKAZU, YOKOSUKA, KANAGAWA, JP
分类号 C25F3/12;C25F7/00;(IPC1-7):C25F3/12;H01L21/306 主分类号 C25F3/12
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