| 摘要 |
The present invention relates to a semiconductor device including cell semiconductor patterns arranged on a semiconductor substrate. On the semiconductor substrate, semiconductor dummy patterns are arranged. The semiconductor dummy patterns are arranged on the same surface as the cell semiconductor patterns. Additionally, a peripheral circuit is arranged between the semiconductor substrate and the cell semiconductor patterns. Also, a peripheral wiring structure is arranged between the semiconductor substrate and the cell semiconductor patterns. The peripheral wiring structure is electrically connected to the peripheral circuit and is extended towards the outside of the cell semiconductor patterns. Meanwhile, an inner dummy structure is arranged between the semiconductor substrate and cell semiconductor patterns. Parts of the inner dummy structure are arranged on the same surface as the peripheral wiring structure. On the semiconductor substrate, an outer dummy structure which is not overlapped with the cell semiconductor patterns is arranged. Parts of the outer dummy structure are arranged on the same surface as the peripheral wiring structure. Meanwhile, on the cell semiconductor patterns, a cell array area is arranged. Conductivity shielding patterns are arranged between the cell semiconductor patterns and the semiconductor substrate, while the conductivity shielding patterns are arranged on the peripheral circuit and the peripheral wiring structure. The purpose of the present invention is to provide the semiconductor device capable of raising the degree of integration. |
