| 摘要 |
PURPOSE: To reduce a defect of phase shift mask using a half-tone material. CONSTITUTION: In a half-tone phase shift mask where a semi-transmissive member 2 having an opening 3 is adhered on a transparent substrate 1, the substrate 1 within the opening 3 is etched at a specified depth and removed, and the thickness of the member 2 is adjusted depending on such an etching depth that a phase difference of exposing light transmitting the opening 3 and non- opening part is π. In addition, A step where a member 2 is deposited on the substrate 1 and the member 2 is patterned to form the opening 3 and following step where the substrate 1 within the opening 3 is partly etched and removed in a depthwise direction are provided so as to adjust the thickness and etching depth of the member 2 in such a way that the phase difference of exposing light transmitting the opening 3 and non-opening part is π. |
