SILICIDE LAYER FORMING METHOD

摘要

The method is provided to form the silicide layer which enables the metal layer to be used as sacrificial barrier and diffusion barrier, comprises the steps of: forming a layer (40) which contains metal to be silicide on top of an internal silicon layer (3) which contains silicon; forming a metallic silicide layer (6) by thermal process wherein the layer (6) is of titanium silicide layer.