| 摘要 |
FIELD: informatics and computers, magnetic-optical memory devices of different usage computers auxiliary memory in particular. SUBSTANCE: magnetic carrier of information is made in the form of dielectric substrate with applied on it amorphous ferromagnetic film with perpendicular magnetic anisotropy. Film has dysprosium Dy, cobalt Co and bismuth Bi. Film is protected by silicon oxide SiO. Introduction of bismuth Bi into film allowed to increase significantly ratio of carrier signal/noise during information play back and to increase energy sensitivity of carrier during information recording due to increase of magnetic-optical Kerr effect and decrease of Curie temperature. EFFECT: increased carrier signal-to-noise ratio during information reading and to increase carrier energy sensitivity during information recording. |
