MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE FIELD OXIDE

摘要

The field oxide manufacturing method comprises the steps of: thermally formating a pad oxide layer(12) on a wafer(11); depositing a polysilicon(13), a nitride(14) and a CVD oxide layer(17) sequentially; etching the CVD oxide layer(17) for assigning a field region, forming a groove(18) by etching the exposed nitride layer(15); depositing first nitride layer(15) on the groove(18) and the patterned CVD oxide layer(17); formating self-spacer(14a) on part of the nitride layer after a certain part of a polysilicon(13) under the groove(18) is spacer etched to be exposed; formating a field oxide layer(160) through a oxidation process by using the self-spacer(14a) while a part of polysilicon(13) is exposed, thereby enhancing the integration of the device.