发明名称 Low-resistance conductive pigment and method of manufacturing same
摘要 A low resistance conductive pigment containing indium oxide crystal grains each including a partial amount of Sn. The amount of Sn ranges from about 1 to about 15 mol % relative to the total amount of Sn and In in each of the indium oxide crystal grains. The conductive pigment further includes a specified surface acidity and a specified volume resistivity. The conductive pigment exhibits improved visibility and averages a primary particle size of up to 0.2 mu m,. This allows for the manufacture of superior transparent conductive films which can be useful, inter alia, as a transparent electrode in liquid crystal displays and heating elements having transparent surfaces. In one embodiment, ITO crystals undergo an oxygen extraction treatment, while in another embodiment, surface acidity, is increased by a surface modification treatment. The methods of forming conductive pigments, conductive film forming compositions and conductive resin forming compositions are also disclosed.
申请公布号 US5529720(A) 申请公布日期 1996.06.25
申请号 US19930174225 申请日期 1993.12.28
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 HAYASHI, TOSHIHARU;SEKIGUCHI, MASAHIRO;NISHIHARA, AKIRA
分类号 C01G19/00;C08K3/22;C09C1/00;C09D5/24;H01B1/00;H01B1/08;H01B5/14;(IPC1-7):C04B14/30;C09C1/62 主分类号 C01G19/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利