发明名称 Semiconductor device having a multilayer interconnection structure
摘要 A semiconductor device having a increased freedom of design in the connection between an electrode and one or more inner leads. In a semiconductor device 2, a semiconductor element 4 is fixed onto a die pad 2 which is a part of a lead frame. On the surface of the semiconductor element 4 is formed an electrode (bonding pad) 5, which is electrically connected to an inner lead 3 through a bridge structure 10 comprising an insulating film 11 deposited at a lowermost position and a conductive thin film pattern 12 formed thereon.
申请公布号 US5530282(A) 申请公布日期 1996.06.25
申请号 US19950513253 申请日期 1995.08.10
申请人 ROHM CO., LTD. 发明人 TSUJI, MASAHIRO
分类号 H01L23/50;H01L23/495;(IPC1-7):H01L23/495;H01L23/48 主分类号 H01L23/50
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