| 摘要 |
PURPOSE: To enable semiconductor layers different from each other in composition growth rate without producing large lattice deformation. CONSTITUTION: A first SiO2 film 122, a first Ti film 123, an Au film 1 24, and a second Ti film 125 are successively laminated on an N-InP substrate 101. A metal film is removed from an active guide region 107. A second SiO2 film 126 is deposited (a). The second SiO2 film 126 is patterned into a pair of stripe masks 129 (b). An N-InP buffer layer 131, an I-InGaAsP guide layer, and a P-InP clad layer 133 are successively laminated through a selective MOVPE crystal growth method. A passive guide region 108 where a metal film is located increased its temperature while the I-InGaAsP guide layer is grown, so that InGaAsP high in P content is formed (c). |
