| 摘要 |
PURPOSE: To conduct an exposing operation without actually measuring the image-formation characteristics of a projection optical system in a projection aligner in which the pattern on a reticle is projected on a wafer through the projection optical system. CONSTITUTION: A magnification optical system 39, consisting of an objective lens 17 and a relay optical system 19, and an image pickup element 26 are provided on a stage where a wafer is mounted. The index pattern formed on a reticle is illuminated by an illumination light, and it is image-formed in the vicinity of the first lens 20 of the objective lens 17 through a projection optical system 3, the image of the index pattern is magnified by a magnification optical system 39, it is image-formed on the light-receiving surface 26a of the image- pickup element 26, it is converted into a signal by the image-pickup element 26, the signal sent from the image-pickup element 26 is treated by an image processing system 42, and the image formation characteristics of the projection optical system 3 is measured based on the above-mentioned result. |
