| 摘要 |
PURPOSE: To provide a charge-coupled device wherein charges are prevented from being left untaken in transfer due to the height of a barrier during two- phase drive, and high-speed drive is thus possible. CONSTITUTION: An n-type CCD buried channel 2 is formed in the surface layer of a p-type silicon substrate 1 in the direction of signal charge transfer. Transfer gates 10 (11, 12, 13) are formed on the channel 2, and storage regions 2 and barrier regions 3, different in impurity concentration from one another, are formed under the gates 10, one each. In the resultant charge-coupled device, signal charges are transferred by driving the transfer gates 10 using a two-phase clockϕ1,ϕ2. The potential of the respective storage regions 2 and barrier regions 3 is set so that the difference in potential between the storage regions 2 and the barrier regions 3 is 0.5V when 0V is applied to the transfer gates 10.
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