| 摘要 |
PURPOSE: To reuse the energy stored in the gate capacity of an MOSFET. CONSTITUTION: When a pulse signal being applied from a pulse signal source (Dv) has a voltage 'V1', an MOSFET (Q1) is turned ON. Consequently, energy is stored in the gate capacity (Ciss) of the Q1. Energy is also stored in a capacitor (C0) through a resonance inductor (L2) and a second diode (D2) and a load (RL) is fed with energy from the C0. When the voltage of the pulse signal goes '0', the Q1 is turned OFF. Furthermore, a resonance circuit of Ciss-L2-D2-C 0-Ciss is formed and the energy is transferred from the Ciss to the L2. A circuit of L2-D2-C0-D3-L2 is also formed and the energy is transferred from the L2 to the C0. Finally, the energy is fed from the C0 to the RL. |
