发明名称 |
A method for producing a channel region layer in a voltage controlled semiconductor device |
摘要 |
In a method for producing a channel region layer in a SiC-layer for providing a voltage-controlled semiconductor device a layer of silicon being one of a) polycrystalline and b) amorphous is applied on top of the SiC-layer, an aperture is etched in the silicon layer extending to the SiC-layer, a surface layer of a certain thickness of the silicon layer is oxidized, and the lateral extension of the channel region layer is determined by removing the oxidized layer and carrying out a further implantation into the area exposed by the so formed enlarged aperture. |
申请公布号 |
SE9602407(D0) |
申请公布日期 |
1996.06.19 |
申请号 |
SE19960002407 |
申请日期 |
1996.06.19 |
申请人 |
ABB RESEARCH LTD |
发明人 |
CHRISTOPHER *HARRIS;MIETEK *BAKOWSKI;LENNART *ZDANSKY;BO *BIJLENGA |
分类号 |
H01L21/04;H01L29/24;H01L29/78;(IPC1-7):H01L/ |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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