SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To shorten a gate length and reduce the resistance of gate electrodes by treating first and second electrodes as gate electrodes, a third electrode as a source electrode, and a fourth electrode as a drain electrode. CONSTITUTION: An n-type GFaAs layer 12 is formed on a semiinsulating GaAs substrate 11 and a first electrode 15a (gate electrode) is formed on the surface of the n-type GaAs layer 12. A second electrode 21a (gate electrode) is formed on the surface of first and second insulators 16a and 16b as if sandwiching the first electrode 15a with the side of the first electrode 15a and is electrically connected to the first electrode 15a. The third electrode 22a (source electrode) and the fourth electrode 23a (drain electrode) are formed on the n-type GaAs layer on both sides of the first electrode 21a by sandwiching the insulators 16a and 16b. The first electrode 15a is electrically connected to the second electrode 21a and both can be treated as one gate electrode. This enables the gate length to be made short and the resistance of the gate electrodes 15a and 21a to be decreased.