发明名称 MANUFACTURE OF SEMICONDUCTOR LASER
摘要 PURPOSE: To enable an alloy process on a bonding surface with excellent uniformity, by making fusing metal on a laser electrode or a heat sink stripe- shaped, and dividing an alloy region on the bonding surface of the laser electrode and the heat sink into comparatively small regions. CONSTITUTION: When each of the alloy regions is restricted in a small region, uniform alloy reaction progresses in each of the small regions. In the case that a laser electrode is composed of Au and metal material on a heat sink 2 is AuSn, the alloy reaction uniformly progresses in the domain where the alloy region is smaller than 1mm<2> , and therefore each of the regions is divided into regions smaller than or equal to 1mm<2> . That is, an alloy region 41 is limited to a region of 150μm in width and 1mm in length, and the limited regions are laterally arranged at intervals of 50μm. As the result, uniform alloy is formed in all regions in strips parts on the laser side. Thereby stable high optical output can be obtained in the range from 4W to 5W.
申请公布号 JPH08153932(A) 申请公布日期 1996.06.11
申请号 JP19940317612 申请日期 1994.11.28
申请人 NEC CORP 发明人 KITAMURA MITSUHIRO
分类号 H01S5/00;(IPC1-7):H01S3/18 主分类号 H01S5/00
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