| 摘要 |
<p>PURPOSE: To provide a photomask capable of high-resolution exposure for both the L&S pattern and isolated pattern (contact hole, isolated remainder, isolated void), an exposure method using the photomask and a method for producing the photomask. CONSTITUTION: When a pattern to be exposed on a wafer is a cyclic pattern, a mask pattern is formed on the photomask 18 with a transmissive part 183 and a semitransmissive part 182 in a cycle almost twice larger than the cycle. The semitransmissive part 182 is formed so that the phase difference from the light transmitting the transmissive part 183 is controlled to be about 180 deg.. Further, to eliminate a zero-order diffracted light, when the area of the semitransmissive part 182 is denoted by A1 and that of the transmissive part 183 by A2, the amplitude transmittance (t) of the semitransmissive part 182 is made nearly equal to A1/A2. Meanwhile, the amplitude transmission of the semitransmissive part 182 is changed and the exposure to the pattern 18 is controlled in accordance with the kind of pattern, and the L&S pattern and isolated pattern are simultaneously transferred on the wafer with one sheet of the photomask 18.</p> |
