发明名称 MEMORY CIRCUIT
摘要 <p>PURPOSE: To conduct testing and reprogramming by a simple method in a memory circuit for storing information. CONSTITUTION: The memory circuit is adapted to storage for switch information to alternately switch the circuit components of a monolithic integrated circuit, has two series wirings inserted between the two electrode (VDD, GND) of a voltage supply source, and the wirings have EPROM transistors (E1, E2) and MOS transistors (M1, M2). The transistors (E1, E2) are coupled and connected to a reference voltage source (REF), and the gates of the transistors (M1, M2) are connected to the connecting point of the transistors (E1, E2) and the transistors (M1, M2) of the other series wiring.</p>
申请公布号 JPH08148000(A) 申请公布日期 1996.06.07
申请号 JP19940330311 申请日期 1994.12.07
申请人 S G S THOMSON MICROELECTRON GMBH 发明人 RAINERU BONITSUTSU
分类号 G11C17/00;G11C16/04;G11C29/00;G11C29/12;G11C29/50;H01L21/8247;H01L27/115;H03K19/177;(IPC1-7):G11C29/00;G11C16/06 主分类号 G11C17/00
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