| 摘要 |
PURPOSE: To obtain a semiconductor device having the characteristics of a high mounting density, high-speed operation, low noise and excellent durability, by providing a glass-ceramic chip carrier having a decoupling capacitor on a base board made of alumina, etc., while connecting it with the wirings of the base board, and by mounting a semiconductor chip on the chip carrier through a flipped chip connection method. CONSTITUTION: On a base board 24 made of alumina or aluminium nitride wherein both on its surface and in its inside signal wiring layers 22 are formed, a chip carrier 13 made of glass ceramics which has a decoupling capacitor is connected with the signal wiring layers 22, and on the chip carrier 13 a semiconductor chip 11 is mounted by a flipped chip connection method. For example, in the chip carrier 13, inside a glass ceramics 15, a dielectric layer 16 made of such a material having a high dielectric constant as BaTiO3 is formed, and power supply and grounding layers 18, 18 having noble metals as their main components are so formed that the dielectric layer 16 is interposed between them, and thereby, the decoupling capacitor 27 is formed out of the dielectric layer 16 and the power supply and grounding layers 18, 18. |
