Procédé de tapissage ou de remplissage par dépôt en phase gazeuse d'une structure en relief et application de ce procédé pour la fabrication d'éléments semi-conducteurs.

摘要

Process for covering or filling a relief structure, with an aspect ratio of greater than 2 and a spacing of less than 500 nm., involves CVD of one or more insulating, metallic or opt. doped semiconductive chemical species with a growth rate of max. 10 nm./min. Also claimed are: (i) an element with one or more relief structures covered or filled by the above process; (ii) an electroluminescent diode based on doped porous silicon of controlled porosity, the pores being filled by the above process with a solid semiconductive chemical species, oppositely doped w.r.t. the porous silicon, and the network of pores being covered by an epitaxial layer on which a metallic contact is deposited; and (iii) multiple quantum wells comprising an electrochemically produced relief structure covered with an insulating, metallic or opt. doped semiconductive chemical species layer.