SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: To provide a semiconductor light emitting device utilizing a II-VI group compound semiconductor which assures long term stabilized operation with the continuous oscillation under the room temperature. CONSTITUTION: In a semiconductor light emitting device where the principal part 3 of a semiconductor light emitting device using a II-VI group compound semiconductor is formed on a GaAs substrate 1 through lattice matching with this GaAs substrate 1, the principal part 3 of the semiconductor light emitting device is formed on the GaAs substrate 1 through an interface layer sequentially forming at least GaAs buffer layer 11 and ZnSe layer 12 and at least a partial thickness of the ZnSe layer 12 in the side of the GaAs buffer layer is formed as the non-doped ZnSe layer 12a.