摘要 |
A semiconductor device includes a semiconductor substrate (10), an active layer (14) formed on the semiconductor substrate, source and drain electrodes (19, 20) respectively formed on the active layer, a gate electrode (31) formed on the active layer between the source and drain electrodes and including a gate contact portion (31a) which makes contact with the active layer and has a thickness greater than those of the source and drain electrodes and an overgate portion (31b) which is connected to the gate contact portion and extends over at least a portion of one of the source and drain electrodes, a first insulator layer (32) formed on the active layer and covering the source and drain electrodes and the gate contact portion, a first contact hole in the first insulator layer through which the overgate portion connects to the one of the source and drain electrodes, a second insulator layer (34) formed on the first insulator layer and covering the overgate portion, a second contact hole in the second insulator layer at a position above the overgate portion, and an interconnection layer (36) formed on the second insulator layer and connected to the overgate portion via the second contact hole. |