| 摘要 |
PURPOSE: To obtain a composition capable of keeping the curing shrinkage of the coating film thereof to a minimum in forming a semiconductor insulation film and/or flattened film therefrom, and capable of giving a perfectly flattened film by merely conducting a coating operation once or twice. CONSTITUTION: This composition comprises (A) polymethylsilsesquioxane 500-10000 in number-average molecular weight, (B) an organic solvent soluble for the polymethylsilsesquioxane, and (C) a tetra-1-4C alkylammonium hydroxide at the weight ratios A/B of (2:98) to (50:50) and (A+B)/C of (1:3×10<-5> ) to (1:1×10<-8> ). A semiconductor insulation film or flattened film is formed by coating this composition on a semiconductor substrate followed by evaporating the organic solvent at 100-200 deg.C, and then curing the resultant coating film under heating at 200-500 deg.C.
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