发明名称 |
Diamond film field effect transistor with self aligned source and drain regions |
摘要 |
A diamond film field effect transistor, excellent in characteristics and a method of manufacturing the transistor, in which a contact resistance between electrodes and respective source and drain region is small. The transistor has a channel layer of a p-layer made of semiconducting diamond, an i-layer made of high resistance diamond as a gate insulating layer, which is formed on the channel layer, a gate electrode film formed on the i-layer and a source region and a drain region formed on the surface of the i-layer in self-alignment to the gate electrode film by ion implantation using the gate electrode film, side walls and a protective film as masks.
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申请公布号 |
US5523588(A) |
申请公布日期 |
1996.06.04 |
申请号 |
US19940269896 |
申请日期 |
1994.07.06 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO |
发明人 |
NISHIMURA, KOZO;KOYAMA, HISAHI;KOBASHI, KOJI |
分类号 |
H01L29/78;H01L21/04;H01L29/10;H01L29/16;H01L29/45;H01L29/51;H01L29/786;(IPC1-7):H01L31/031;H01L29/80;H01L29/12 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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