| 摘要 |
PURPOSE: To prevent generation of haze by a method wherein a silicon wafer whose main surface is inclined by a specified value is set in a reaction furnace at a temperature in a specified range, then the temperature is raised, and epitaxial growth is performed at a film formation rate in a specified range. CONSTITUTION: A silicon single crystal wafer has a main surface approximate to the (111) face. The main surface is inclined by an angle larger than or equal to 1 deg. and smaller than 4 deg. to the <111> axis, in the 110} direction and/or the 211} direction. When the wafer is subjected to epitaxial growth, the wafer is set in a reaction furnace at a temperature in the range of 300-900 deg.C, and then the temperature is raised. The film formation rate of the epitaxial growth is set larger than 1.0μm/min and smaller than or equal to 3.0μm/min. Thereby the generation of haze can be restrained to be 1ppm or less.
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