摘要 |
A method of growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost involves the use of. The substrate materials which are either Pt or its alloys, which have been sublect to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within +/-10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800 DEG C. |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.), KOBE, JP |
发明人 |
SHINTANI, YOSHIHIRO, TOKUSHIMA, JP;TACHIBANA, TAKESHI, KOBE, HYOGO, JP;NISHIMURA, KOZO, KOBE, HYOGO, JP;MIYATA, KOICHI, KOBE, HYOGO, JP;YOKOTA, YOSHIHIRO, KOBE, HYOGO, JP;KOBASHI, KOJI, KOBE, HYOGO, JP |