| 摘要 |
A silicon-on-insulator (SOI) material is formed from a bonded silicon wafer structure which includes, in order, a silicon handler substrate, an insulating oxide layer, a silicon device layer, a highly-doped silicon etch stop layer, and a top silicon substrate. The bonded silicon wafer structure is etched in a first anisotropic etching step to remove the top silicon substrate and expose the etch stop layer. Subsequently, a second anisotropic etching step is performed to remove a major portion but less than all of the etch stop layer, with the second anisotropic etching step continuing only until a substantially maximum degree of thickness uniformity is obtained in a remaining portion of the etch stop layer. The remaining portion of the etch stop layer is then removed, to yield a silicon-on-insulator material having a high degree of thickness uniformity.
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