| 发明名称 |
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| 摘要 |
<p>PURPOSE:To provide the phase shift mask blank having an etching stop layer which has basic properties as the etching stop layer and acid resistance in addition thereto and the phase shift mask and the production thereof. CONSTITUTION:The phase shift mask blank having the etching stop layer 2 which has basic properties as the etching stop layer 2 and the acid resistance in addition thereto and the phase shift mask and the production thereof are obtd. by using a material incorponating 20 to 92mol% Alambda2O3 and 8 to 80mol% SnO2 to constitute the etching stop layer 2 for stopping etching of a phase shift layer 3 at the time of the etching.</p> |
| 申请公布号 |
JP2501383(B2) |
申请公布日期 |
1996.05.29 |
| 申请号 |
JP19910328637 |
申请日期 |
1991.12.12 |
| 申请人 |
HOYA CORP |
发明人 |
MIURA TOSHINOBU;SAKAI HIROYUKI;YAMAGUCHI YOICHI |
| 分类号 |
G03F1/29;G03F1/30;G03F1/68;G03F7/20;H01L21/027;H01L21/30;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/29 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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