发明名称 Method for producing microdot-emitting cathodes on silicon for compact flat screens and resulting products
摘要 PCT No. PCT/FR93/01191 Sec. 371 Date Feb. 1, 1995 Sec. 102(e) Date Feb. 1, 1995 PCT Filed Dec. 3, 1993 PCT Pub. No. WO94/14182 PCT Pub. Date Jun. 23, 1994.A method for producing microdot emitting cathodes on silicon for compact flat screens, and the products obtained by means of said method, are disclosed. According to the method, the emitting cathodes are made from a basic monolithic silicon substrate (1) consisting of a thick wafer (at least 300 microns) or a thin film a few microns thick on an insulating substrate (alumina or glass), the silicon film being "active" in both cases. The method is useful in the field of flat display screens based on the physical phenomenon of cathodoluminescence and field effect electron emission, and in all industrial sectors using compact display screens, e.g. video camera viewfinders, calculators, monitoring devices of all kinds, vehicles, watches and clocks, etc.
申请公布号 US5521461(A) 申请公布日期 1996.05.28
申请号 US19950256977 申请日期 1995.02.01
申请人 PIXEL INTERNATIONAL 发明人 GARCIA, MICHEL
分类号 H01J9/02;H01J29/04;H01J29/96;H01J31/12;(IPC1-7):H01J9/02 主分类号 H01J9/02
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