发明名称 |
Monolithic integrated structure to protect a power transistor against overvoltage |
摘要 |
A structure of an electronic device having a predetermined unidirectional conduction threshold is formed on a chip of an N-type semiconductor material and includes a plurality of isolated N-type regions. Each isolated N-type region is bounded laterally by an isolating region and at the bottom by buried P-type and N-type regions which form in combination a junction with a predetermined reverse conduction threshold and means of connecting the junctions of the various isolated regions serially together. The buried N-type region of the first junction in the series is connected to a common electrode, which also is one terminal of the device, over an internal path of the N-type material of the chip, and the buried P-type region of the last junction in the series contains an additional buried N-type region which is connected electrically to a second terminal of the device.
|
申请公布号 |
US5521414(A) |
申请公布日期 |
1996.05.28 |
申请号 |
US19940234334 |
申请日期 |
1994.04.28 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.R.L. |
发明人 |
PALARA, SERGIO |
分类号 |
H01L29/73;H01L21/331;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L29/732;H01L29/78;(IPC1-7):H01L23/62;H01L27/082;H01L29/00;H01L29/76 |
主分类号 |
H01L29/73 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|