POLLUTION SOURCE ELEMINATING METHOD OF LPCVD REACTION CHAMBER

摘要

The method for eliminating the pollutant or pollutive source in the reaction chamber of low pressure chemical vapor deposition comprises oxidizing the pollutant or pollutive source on the reaction chamber wall generated from deposition of polysilicon film or silicon nitride film when introducing a oxidative source gas such as O2 and/or O2/H2 gases into the reaction chamber. The method makes the yield increased by removing the defect-generating pollutant or pollutive source, and lengthens the cleaning period of the reaction chamber by two times because of the improved durability of the oxidized reaction chamber.