Semiconductor conversion device

摘要

To review conductor areas on a drive-circuit substrate used for a semiconductor conversion device and to implement a semiconductor conversion device which rarely malfunctions, a drive circuit substrate (5) has respective independent conductor areas (11 to 13) for individual drive circuits (14 to 16), and a common conductor area (31) for the individual drive circuits (34 to 36) integrally formed on the surface (5a) thereof together with a terminal part connected to the connection leads (6, 7). This configuration minimizes the value of the parasitic capacitance formed between the conductor areas and prevents the individual drive circuits from malfunctioning due to high frequency noise currents flowing across the parasitic capacitance. In addition, the drive circuit consists of a common ground electrical potential line (45) for the individual drive circuits (14 to 16) and individual ground electrical potential lines (46, 47, etc) for the respective individual drive circuits (14 to 16) and the individual reference electrical potential lines (46, 47, etc) are connected at a single point to the ground electrical potential line (45) using connection lines (46a, 47a, etc). This configuration prevents the drive circuit from malfunctioning as a result of a non-uniform reference electrical potential within each individual drive circuit (14, 15, or 16).