| 摘要 |
PURPOSE: To produce a gold wire for bonding for IC chip connection, capable of giving the prescribed shear strength even if bonding area (bond diameter) is decreased and extremely useful for making semiconductor devices high- concentration and high-performance. CONSTITUTION: A master alloy, prepared by incorporating, by weight, 1,000-400,000ppm of Pd and Pt, 1-500ppm of In, Sb, and Sn, and 1-500ppm of Be, Ca, Ge, Ru, Cu, Fe, Mg, and rare earth elements into high purity gold, is melted in a vacuum melting furnace and then cast. Subsequently, cold working using a grooved roll and a wiredrawing machine and annealing are repeatedly carried out, by which the gold wire is finished into a fine wire of 20μm final wire diameter and 4% elongation. |
