| 发明名称 |
Method and apparatus for static RAM |
| 摘要 |
A thin film transistor in which a device active layer is formed on an insulation film, in which an interface state density present at the interface between the active layer and the insulation film is set to less than 1x1011/cm2. The characteristics of TFT can be enhanced by decreasing the leak current and SRAM memory cell can be provided with easy design for the process and the structure while avoiding increase in the resistance and additional capacitance and ensuring voltage withstand.
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| 申请公布号 |
US5518939(A) |
申请公布日期 |
1996.05.21 |
| 申请号 |
US19950389729 |
申请日期 |
1995.02.15 |
| 申请人 |
SONY CORPORATION |
发明人 |
NEGISHI, MICHIO;NAIKI, IHACHI;SASAKI, MASAYOSHI;KIMURA, TADAYUKI |
| 分类号 |
H01L21/28;H01L21/336;H01L21/8244;H01L21/84;H01L27/11;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
H01L21/28 |
| 代理机构 |
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