发明名称 Reactively compensated power transistors
摘要 A transistor for amplifying a high-frequency signal comprises multiple unit transistors arranged about a center transmission line 122 and features reactive compensation 140 along the transmission line to provide signals at the output of the unit transistors which generally add in-phase. This has advantages in that a larger or more distributed transistor arrangement than can traditionally be used is made possible without incurring the gain or power degradation associated with the phase differences of signals amplified by unit transistors occurring at distant points along the center transmission line. The reactive compensation includes a capacitor 140 at the end of the transmission line 122 that may be fabricated along with the transistor as a portion of a monolithic integrated circuit.
申请公布号 US5519358(A) 申请公布日期 1996.05.21
申请号 US19940290264 申请日期 1994.08.15
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TSERNG, HUA QUEN
分类号 H01L27/02;H01L27/06;H03F3/60;(IPC1-7):H03F3/14;H03F3/68 主分类号 H01L27/02
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