| 摘要 |
PURPOSE: To provide the gold alloy wire for a semiconductor element, wherein the loop height of junction can be brought down considerably, which can be coped with the case where the gold alloy wire is used as the bonding wire of a device to be used for a thin type package. CONSTITUTION: Calcium of 5 to 50wt.ppm, yttrium of 5 to 50wt.ppm and samarium of 3 to 70wt.ppm are added to high purity gold, the total quantity of the adding elements is set in the range of 13 to 100wt.ppm, and the remaining part is composed of inevitable impurities. |
