发明名称 SEMICONDUCTOR BOOSTER CIRCUIT
摘要 <p>PURPOSE: To fix the potential on the substrate part of an MOS transistor at a level different for each group by dividing the substrate part of a first MOS transistor, as a whole, into more than one group the potential thereof can be controlled independently. CONSTITUTION: The substrate terminals of transistors M101 -M108 are divided into a substrate terminal group of transistors M101 -M104 and a substrate terminal group of transistors M105 -M108 . The substrate terminals of the transistors M101 -M104 are then connected with the drain terminal N100 of the transistor M101 . The substrate terminals of the transistors M105 -M108 are connected with the drain terminal N104 of the transistor M105 . This circuitry can fix the potential of the substrate part of an MOS transistor at a level different for each group.</p>
申请公布号 JPH08125133(A) 申请公布日期 1996.05.17
申请号 JP19950160047 申请日期 1995.06.02
申请人 NIPPON STEEL CORP 发明人 SUGAWARA KIWA
分类号 G11C17/00;G11C16/06;H01L21/822;H01L27/04;H02M3/07;(IPC1-7):H01L27/04 主分类号 G11C17/00
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