| 摘要 |
<p>PURPOSE: To obtain a semiconductor device improved in each property tested by TCT, highly resistant to crack due to solder dipping. and excellent in reduction in a warp in a package by using, as the sealant, a compsn. contg. a specific epoxy resin, a phenol resin, and an inorg. filler. CONSTITUTION: This device is produced by sealing a semiconductor element with an epoxy resin compsn. contg. an epoxy resin represented by the formula (wherein Gly is glycidyl), a phenol resin, and an inorg. filler. A known phenol resin can be used without any limitation. A silica powder is an esp. pref. filler. The two resins are compounded in such amts. that the equivalent ratio of hydroxyl groups of the phenol resin to epoxy groups of the epoxy resin is 0.8-1.2. When the filler is a silica powder, it is compounded pref. in an amt. of 50-99wt.% of the compsn.</p> |
