Content addressable memory circuitry and method of operation

摘要

Content addressable memory circuitry and a method of operation are provided. First information is stored. A logic state of a first match line is selectively modified in response to a comparison between the first information and second information. Also, third information is stored. A logic state of a second match line is selectively modified in response to a comparison between the third information and fourth information. A logic state of the second match line is selectively modified in response to the logic state of the first match line.