摘要 |
A non-volatile semiconductor memory device, includes a memory cell having a capacitor formed by stacking a semiconductor layer and a ferroelectric layer between a pair of electrodes, the semiconductor layer and the ferroelectric layer forming a semiconductor-ferroelectric junction, a writing circuit in which a voltage higher than a coercive electric field of the ferroelectric material is applied to the capacitor of the memory cell to align a polarization direction of the ferroelectric layer in a predetermined direction so as to set a capacitance of the capacitor at a predetermined value, thereby writing data corresponding to the predetermined value of the capacitance, and a reading circuit in which a voltage less than the coercive electric field of the ferroelectric layer is applied to the capacitor of the memory cell in which the data is written, thereby reading the data.
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申请人 |
IMAI, MOTOMASA;ABE, KAZUHIDE;YAMAKAWA, KOJI;TOYODA, HIROSHI;KOHANAWA, YOSHIKO;HARATA, MITSUO |
发明人 |
IMAI, MOTOMASA;ABE, KAZUHIDE;YAMAKAWA, KOJI;TOYODA, HIROSHI;KOHANAWA, YOSHIKO;HARATA, MITSUO |