| 摘要 |
<p>A semiconductor device for microwave frequencies with a substrate (1-2) which is provided at a first side (3) with a semiconductor element (4), a passive element (5), and a pattern of conductive elements (6), while the opposed, second side (7) is provided with a metallization (8) which is connected to the elements (4, 5, 6) present on the first side (3) through windows (9) formed in the substrate. The substrate (1-2) consists of a silicon layer (1) which is present on a layer of insulating material (2), the semiconductor element (4) being formed in the silicon layer (1), and the metallization (8) being provided on that side of the layer of insulating material (2) which is remote from the silicon layer (1). The silicon layer (1) may here have a very small thickness of, for example, 0.1 to 0.2 νm. In such a thin silicon layer (1), bipolar and field effect transistors capable of processing signals of microwave frequencies can be formed. Since the silicon layer (1) is thin, the influence of the conductivity of silicon on passive elements is small.</p> |
