An electronic switch (1) has a switching element (2) of a semiconductor switch type and a mode of operation characteristic of at least one FET, i.e. also provided with an inverse operation body diode (8) required by the state of the art. A control circuit (10) for carrying out working instructions is designed in such a way that in the inverse operation the gate (5) receives a voltage having such an intensity that the gate-source voltage is sized to leave the body diode without current. A functional unit (7) of the control circuit is designed to put the switching element (2) in a conductive switched-on state depending on a switching voltage or current, i.e. in the inverse operation.
