| 摘要 |
A photovoltaic element having a high release voltage is provided by inhibiting the injection of carrier to p-type semiconductor located at the upmost surface of the generation layer from the upper electrode. The photovoltaic element according to the present invention, in which an n-type semiconductor which is supposed to be represented by "n", an i-type semiconductor which is supposed to be represented by "i", and p-type semiconductor which is supposed to be represented by "p", are laminated in this order on to a substrate to form a structure comprising a nip junction, and a generation layer containing at least one of the structure is provided; that the upper electrode is placed on the p-layer located at the upmost surface of the generation layer to form the photovoltaic element, is characteristic in that the p-layer positioned at the upmost surface of the generation layer is composed of a first p-layer containing crystal that is connected with the i-layer and a second p-layer comprising amorphous that is connected with the upper electrode. |
