发明名称 |
Method of fabricating monolithic multifunction integrated circuit devices |
摘要 |
<p>A method of selective molecular beam epitaxy for fabricating monolithically integrated circuit devices on a common substrate including combinations of PIN diode devices, HBT devices, HEMT devices and MESFET devices. The method includes depositing a profile layer of one of the devices on an appropriate substrate and then depositing a first dielectric layer over the profile layer. The profile layer and the dielectric layer are then etched to define a first device profile. A second profile layer for defining a second device is then deposited over the exposed substrate. The second profile is then selectively etched to define a second device profile. This process can be extended to more than two different device types monolithically integrated on a common substrate as long as the first developed devices are robust enough to handle the temperature cycling involved with developing the subsequent devices.</p> |
申请公布号 |
EP0710984(A1) |
申请公布日期 |
1996.05.08 |
申请号 |
EP19950115137 |
申请日期 |
1995.09.26 |
申请人 |
TRW INC. |
发明人 |
STREIT, DWIGHT C.;UMEMOTO, DONALD K.;OKI, AARON K.;KOBAYASHI, KEVIN W. |
分类号 |
H01L21/331;H01L29/872;H01L21/203;H01L21/338;H01L21/8222;H01L21/8232;H01L21/8248;H01L21/8252;H01L27/06;H01L27/095;H01L29/205;H01L29/47;H01L29/73;H01L29/737;H01L29/778;H01L29/812;(IPC1-7):H01L27/06;H01L21/825 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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