| 发明名称 |
N-type HIGFET and method |
| 摘要 |
An N-type HIGFET (10) utilizes two etch layers (17,18) to form a gate insulator (16) to be shorter that the gate electrode (21). This T-shaped gate structure facilitates forming source (23) and drain (24) regions that are separated from the gate insulator (16) by a distance (22) in order to reduce leakage current and increase the breakdown voltage.
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| 申请公布号 |
US5514891(A) |
申请公布日期 |
1996.05.07 |
| 申请号 |
US19950459855 |
申请日期 |
1995.06.02 |
| 申请人 |
MOTOROLA |
发明人 |
ABROKWAH, JONATHAN K.;LUCERO, RODOLFO;ROLLMAN, JEFFREY A. |
| 分类号 |
H01L29/812;H01L21/285;H01L21/335;H01L21/338;H01L29/778;H01L29/80;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113 |
主分类号 |
H01L29/812 |
| 代理机构 |
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