| 摘要 |
PURPOSE: To enable a diffusion layer to be of low resistance and a shallow junction, so that a CMOS transistor can be made in microstructure with improved operating speed, reduced power consumption and lower process cost, by forming a specified tungsten film in a self-aligned manner simultaneously on a p<+> -type silicon and a n<+> -type silicon. CONSTITUTION: A tungsten film 8 the erosion to a p<+> type silicon and an n<+> type silicon under 15nm, the film thickness difference on the p<+> type silicon and the n<+> type silicon under 15nm, respectively, and the sheet resistance under 5Ωis simultaneously built up in a self-aligned manner on the p<+> type silicon and the n<+> type silicon forming an impurity diffusion layer of a CMOS transistor. For example, a process of forming the tungsten film 8 is so designed that it includes a first reaction step, in which a tungsten film of over 1nm under 15nm is formed through a reaction of silicon and polysilicon with WF6 , and a second reaction step, in which a tungsten film is further layer-built through a reaction between a reducing gas and WF6 , consecutively in this order.
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