| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an SOIDRAM cell with an inexpensive and ordinary wafer by an SOI trench structure, where a trench capacitor is provided at the lower side of a wafer insulator and an access device is provided at the upper side of an insulator oxide. SOLUTION: An SOI trench PRAM cell has an SOI substrate 1, a deep trench 2, an oxide band 4 for separating the device from the substrate, an array well 5, an oxide collar 6 around the trench, a polysilicon filler 7 inside the deep trench 2, a trench capacitor node insulator 8, a device diffusion part 9, a gate polysilicon 10, a strap polysilicon filler 11, a gate conductor cap 12, and a surface strap 13. Therefore, a parastic trench sidewall leakage can also be completely excluded by the oxide band 4 that completely separates the source/drain from the substrate 1. |
