| 摘要 |
A process of forming a semiconductor which allows n type doping to be applied to a diamond semiconductor layer is carried out so as to form a diamond semiconductor layer on a substrate, forming a layer of SiO2 over the diamond semiconductor layer and forming a resist pattern (14) over the SiO2 layer. Etching processing of the SiO2 layer via the resist pattern is carried out. Then, the exposed diamond layer is subjected to doping process under the following conditions; N2=30SCCM', 1.33 Pa, 100 DEG C., microwave 850 W (2.45 GHz), RF bias 0 W, pulse duty ratio 1:2, a pulse type supply being used for microwave irradiation. Damage to the material by this process imparts high density, doping to the diamond layer. High saturation doping is possible according to this process.
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